A Flux Controlled Memristor using 90nm Technology
نویسندگان
چکیده
A flux-controlled memristor using complementary metal–oxide–(CMOS) structure is presented in this study. The proposed circuit provides higher power efficiency, less static dissipation, lesser area, and can also reduce the supply by CMOS 90nm technology. implemented based on use of a second-generation current conveyor (CCII) operational transconductance amplifier (OTA) with few passive elements. uses current-mode approach which improves highfrequency performance. reduction crucial aspect to decrease consumption VLSI. An offered emulator made operate incremental decremental configurations well up 26.3 MHZ cadence virtuoso platform gpdk has very little dissipation when operating ±1V supply. Transient analysis, memductance dc analysis simulations are verified practically Experimental demonstration ideal ICs AD844AN CA3080, multisim exhibits theoretical simulation discussed.
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ژورنال
عنوان ژورنال: Indian Journal of Signal Processing (IJSP)
سال: 2021
ISSN: ['2582-8320']
DOI: https://doi.org/10.35940/ijsp.b1004.051221